ZXTN619MATA - Diodes Incorporated

Manufacturer Part Number

ZXTN619MATA

Manufacturer

Diodes Incorporated

Introduction

High-performance NPN bipolar junction transistor designed for power switching and amplification applications.

Product Features and Performance

Very high DC current gain (hFE) of 100 minimum at 2A, 2V

High-frequency operation up to 165 MHz transition frequency

Low collector-emitter saturation voltage of 320 mV at 200 mA, 4 A

High current capability up to 4 A continuous collector current

Wide operating temperature range from -55°C to 150°C

Product Advantages

Efficient power switching and amplification

Suitable for high-frequency applications

Robust design for reliable operation

Space-saving DFN2020B-3 package

Key Technical Parameters

Maximum Collector-Emitter Voltage: 50 V

Maximum Collector Current: 4 A

Power Dissipation: 3 W

DC Current Gain (hFE): 100 min @ 2 A, 2 V

Transition Frequency: 165 MHz

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of power electronics, amplifier, and switching applications

Application Areas

Power supplies

Motor drives

Audio amplifiers

Switching and control circuits

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

High-performance transistor with excellent power handling and frequency capabilities

Robust and reliable design for demanding applications

Space-saving package with surface mount compatibility

Manufacturer's reputation for quality and innovation in semiconductor products