Manufacturer Part Number
ZXTP05120HFFTA
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Single Bipolar Junction Transistor (BJT)
PNP Darlington Transistor
Product Features and Performance
Operating Temperature Range: -55°C to 150°C
Maximum Power: 1.5 W
Maximum Collector-Emitter Breakdown Voltage: 120 V
Maximum Collector Current: 1 A
Maximum Collector Cutoff Current: 10 A
Collector-Emitter Saturation Voltage: 2 V @ 2 mA, 2 A
Minimum DC Current Gain: 3000 @ 1 A, 5 V
Transition Frequency: 150 MHz
Product Advantages
High current gain for efficient amplification and switching
Wide operating temperature range for diverse applications
High breakdown voltage for use in high-voltage circuits
Surface mount package for compact design
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 120 V
Current Collector (Ic) (Max): 1 A
Current Collector Cutoff (Max): 10 A
Vce Saturation (Max) @ Ib, Ic: 2V @ 2mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 1A, 5V
Frequency Transition: 150MHz
Quality and Safety Features
RoHS3 Compliant
Meets environmental regulations
Compatibility
Surface Mount (SOT-23-3 Flat Leads) package
Compatible with various electronic circuits and systems
Application Areas
Amplifiers
Switches
Power supplies
Motor control
Industrial electronics
Telecommunications equipment
Product Lifecycle
Current production model
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
High current gain for efficient amplification and switching
Wide operating temperature range for diverse applications
High breakdown voltage for use in high-voltage circuits
Surface mount package for compact design
RoHS3 compliance for environmental responsibility
Compatibility with various electronic circuits and systems
Availability of replacement or upgrade options from the manufacturer
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