Manufacturer Part Number
ZXTP08400BFFTA
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Single Bipolar Junction Transistor (BJT)
Product Features and Performance
RoHS3 Compliant
SOT-23F Package
Operating Temperature Range: -55°C to 150°C
Power Rating: 1.5W
Collector-Emitter Breakdown Voltage: 400V
Collector Current (Max): 200mA
Collector Cutoff Current (Max): 50nA
Collector-Emitter Saturation Voltage: 190mV @ 40mA, 200mA
Transistor Type: PNP
DC Current Gain (hFE): 100 (Min) @ 50mA, 5V
Transition Frequency: 70MHz
Surface Mount Mounting
Product Advantages
High voltage and power handling capabilities
Low collector-emitter saturation voltage
High current gain
High-speed switching performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 400V
Collector Current (Max): 200mA
Collector Cutoff Current (Max): 50nA
Collector-Emitter Saturation Voltage: 190mV @ 40mA, 200mA
DC Current Gain (hFE): 100 (Min) @ 50mA, 5V
Transition Frequency: 70MHz
Quality and Safety Features
RoHS3 Compliant
Suitable for high-voltage and high-power applications
Compatibility
Suitable for use in a wide range of electronic circuits and applications
Application Areas
Power amplifiers
Switching circuits
Voltage regulators
Motor control
Industrial and consumer electronics
Product Lifecycle
Active product
Replacements and upgrades may be available
Key Reasons to Choose This Product
High voltage and power handling capabilities
Low collector-emitter saturation voltage for efficient power conversion
High current gain for improved circuit performance
High-speed switching capability for fast-switching applications
RoHS3 compliance for use in environmentally-friendly designs
Suitability for a wide range of electronic applications
