Manufacturer Part Number
ZXTN2011ZTA
Manufacturer
Diodes Incorporated
Introduction
High-voltage NPN bipolar junction transistor (BJT)
Suitable for switching and amplifying applications
Product Features and Performance
Wide operating temperature range: -55°C to 150°C
High power handling: Up to 2.1W
High voltage capability: Up to 100V collector-emitter breakdown voltage
High current capability: Up to 4.5A collector current
High frequency performance: Transition frequency of 130MHz
Product Advantages
Robust design for reliable operation
Compact surface mount package (SOT-89-3)
Suitable for a wide range of applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 100V
Collector Current: 4.5A
DC Current Gain: Minimum 100 @ 2A, 2V
Collector-Emitter Saturation Voltage: 195mV @ 500mA, 5A
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Compatible with various electronic circuits and systems
Application Areas
Switching and amplifying circuits
Power supplies
Motor controls
Industrial electronics
Product Lifecycle
This product is currently in production and available.
Replacement or upgrade options may be available in the future.
Key Reasons to Choose This Product
Robust and reliable performance
Wide operating temperature range
High power and voltage handling capabilities
Compact surface mount package
Suitable for a variety of applications