Manufacturer Part Number
ZXTN2010ZTA
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
SOT-89-3 Package
Operating Temperature: -55°C to 150°C
Power Dissipation: 2.1 W (Max)
Collector-Emitter Breakdown Voltage: 60 V (Max)
Collector Current: 5 A (Max)
Collector Cutoff Current: 50 nA (Max)
Collector-Emitter Saturation Voltage: 230 mV @ 300 mA, 6 A
DC Current Gain (hFE): 100 (Min) @ 2 A, 1 V
Transition Frequency: 130 MHz
Product Advantages
Compact surface mount package
High power handling capability
Wide operating temperature range
Reliable performance
Key Technical Parameters
Package: SOT-89-3
Mounting Type: Surface Mount
Transistor Type: NPN
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a variety of electronic circuits and applications
Application Areas
Power amplifiers
Switching circuits
Voltage regulators
Lighting controls
Industrial electronics
Product Lifecycle
Active product
Replacements and upgrades may be available
Key Reasons to Choose This Product
High power handling capacity
Wide operating temperature range
Reliable and robust performance
Compact surface mount package for efficient board space utilization
RoHS3 compliance for environmental sustainability
ZXTN2010ADiodes IncorporatedTRANS NPN 60V 4.5A E-LINE
ZXTN2010ZQTADiodes IncorporatedTRANS NPN 60V 5A SOT89-3 T&R