Manufacturer Part Number
ZXTN2038FTA
Manufacturer
Diodes Incorporated
Introduction
High-performance NPN bipolar junction transistor (BJT)
Designed for switching and amplifier applications
Product Features and Performance
Power rating up to 350 mW
Collector-emitter breakdown voltage up to 60 V
Collector current up to 1 A
Collector cutoff current of 100 nA
Low collector-emitter saturation voltage of 500 mV @ 100 mA, 1 A
DC current gain of 100 @ 500 mA, 5 V
Transition frequency of 150 MHz
Product Advantages
Excellent switching and amplification performance
High reliability and stability
Compact surface mount package
Key Technical Parameters
Voltage: Collector-Emitter Breakdown Voltage (Max) = 60 V
Current: Collector Current (Max) = 1 A, Collector Cutoff Current (Max) = 100 nA
Transistor Type: NPN
DC Current Gain (hFE) (Min) = 100 @ 500 mA, 5 V
Frequency: Transition Frequency = 150 MHz
Power: Max Power = 350 mW
Package: SOT-23-3
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Switching and amplifier circuits
Power supplies
Audio and RF amplifiers
Inverters and converters
Product Lifecycle
Currently in production
No plans for discontinuation
Key Reasons to Choose This Product
Excellent electrical performance and reliability
Compact and easy to integrate surface mount package
Suitable for a wide range of applications
RoHS3 compliance for environmental responsibility
ZXTN2010ZZETEX