ZXTN2031FTA - Diodes Incorporated

Manufacturer Part Number

ZXTN2031FTA

Manufacturer

Diodes Incorporated

Introduction

High-performance NPN bipolar junction transistor (BJT) for general-purpose switching and amplification applications.

Product Features and Performance

Optimized for high-speed switching

Low collector-emitter saturation voltage

Wide operating temperature range of -55°C to 150°C

High current handling capability up to 5A

High current gain (hFE) of 200 minimum

Transition frequency (fT) of 125MHz

Product Advantages

Excellent switching and amplification performance

Robust design for reliable operation

Wide temperature range for use in diverse applications

Compact surface-mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 50V

Collector Current (IC): 5A

Power Dissipation: 1.2W

Collector-Emitter Saturation Voltage (VCE(sat)): 170mV @ 250mA, 5A

Quality and Safety Features

RoHS3 compliant

Manufactured in an ISO-certified facility

Compatibility

Compatible with various general-purpose NPN bipolar transistor applications.

Application Areas

Switching circuits

Amplifier circuits

General-purpose electronic devices

Product Lifecycle

This product is actively available and supported by the manufacturer. No discontinuation or replacement plans have been announced.

Key Reasons to Choose This Product

Excellent switching and amplification performance

Robust design for reliable operation in diverse environments

Wide operating temperature range for versatile applications

High current handling capability up to 5A

Compact surface-mount package for space-efficient designs