Manufacturer Part Number
ZXTN2010GTA
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Transistor Bipolar (BJT) Single
Product Features and Performance
RoHS3 Compliant
SOT-223-3 Package
TO-261-4, TO-261AA Package Options
Operating Temperature: -55°C ~ 150°C (TJ)
Power Rating: 3 W
Collector-Emitter Breakdown Voltage: 60 V
Collector Current (Max): 6 A
Collector Cutoff Current (Max): 50 nA
Collector-Emitter Saturation Voltage: 260 mV @ 300 mA, 6 A
DC Current Gain: 100 @ 2 A, 1 V
Transition Frequency: 130 MHz
Surface Mount Mounting
Product Advantages
Compact surface mount package
High power and voltage handling capability
Low saturation voltage for efficient operation
Wide operating temperature range
Key Technical Parameters
Collector-Emitter Breakdown Voltage
Collector Current Rating
DC Current Gain
Transition Frequency
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with common bipolar transistor applications
Application Areas
Power amplifiers
Switching circuits
Driver circuits
Voltage regulators
Product Lifecycle
Currently available product
No discontinuation or replacement plans identified
Key Reasons to Choose
High power and voltage capability
Low saturation voltage for efficient operation
Wide operating temperature range
Compact surface mount package
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