Manufacturer Part Number
ZXTN19100CFFTA
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
Surface Mount Packaging (SOT-23F)
Wide Operating Temperature Range: -55°C to 150°C
High Power Rating: 1.5W
High Collector-Emitter Breakdown Voltage: 100V
High Collector Current Rating: 4.5A
Low Collector Cutoff Current: 50nA (ICBO)
Low Collector-Emitter Saturation Voltage: 235mV @ 450mA, 4.5A
High DC Current Gain (hFE): 200 min. @ 100mA, 2V
High Transition Frequency: 150MHz
Product Advantages
Excellent power handling capabilities
High voltage and current ratings
Low saturation voltage for efficient switching
Suitable for high-speed, high-power applications
Key Technical Parameters
Power Rating: 1.5W
Collector-Emitter Breakdown Voltage: 100V
Collector Current: 4.5A
Collector Cutoff Current: 50nA
Collector-Emitter Saturation Voltage: 235mV
DC Current Gain (hFE): 200 min.
Transition Frequency: 150MHz
Quality and Safety Features
RoHS3 Compliant
Reliable surface mount packaging (SOT-23F)
Compatibility
Compatible with a wide range of electronic systems and circuits
Application Areas
Switching circuits
Amplifier circuits
Power management applications
Motor control
Industrial automation
Product Lifecycle
Current product, no discontinuation planned
Readily available replacement options
Key Reasons to Choose This Product
High power handling capability
Excellent voltage and current ratings
Low saturation voltage for efficient switching
High-speed performance with 150MHz transition frequency
Reliable surface mount package
Compliance with RoHS3 environmental standards