Manufacturer Part Number
ZXTN19020DGTA
Manufacturer
Diodes Incorporated
Introduction
High-power NPN bipolar junction transistor (BJT)
Suitable for power amplification and switching applications
Product Features and Performance
High power rating of 3W
High collector-emitter breakdown voltage of 20V
High collector current capability of 9A
High DC current gain of 300 at 100mA, 2V
High transition frequency of 160MHz
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capabilities
Reliable operation across a wide temperature range
Suitable for high-current, high-power applications
Fast switching performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 20V
Collector Current (IC): 9A
DC Current Gain (hFE): 300 @ 100mA, 2V
Transition Frequency (fT): 160MHz
Power Dissipation: 3W
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and automotive applications
Compatibility
Compatible with SOT-223-3 and TO-261-4, TO-261AA packages
Application Areas
Power amplification circuits
Switching applications
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent power handling capabilities for high-current, high-power applications
Wide operating temperature range for reliable performance in harsh environments
Fast switching speed for efficient power conversion and control
RoHS3 compliance for use in environmentally-friendly designs
Availability in popular surface mount packages for ease of integration
ZXTN19100CFFTADiodes IncorporatedTRANS NPN 100V 4.5A SOT23F