ZXMN2F30FHTA - Diodes Incorporated

Manufacturer Part Number

ZXMN2F30FHTA

Manufacturer

Diodes Incorporated

Introduction

N-Channel MOSFET Transistor

Part of the ZXMN2 series

Product Features and Performance

20V Drain to Source Voltage (Vdss)

45mΩ maximum On-Resistance (Rds(on)) at 2.5A, 4.5V

1A maximum Continuous Drain Current (Id) at 25°C

452pF maximum Input Capacitance (Ciss) at 10V

960mW maximum Power Dissipation at 25°C

Capable of operating in the -55°C to 150°C temperature range

Product Advantages

Low On-Resistance for improved efficiency

High current handling capability

Compact SOT-23-3 surface mount package

Key Technical Parameters

N-Channel MOSFET

Vds: 20V, Vgs (Max): ±12V

Rds(on): 45mΩ @ 2.5A, 4.5V

Id (max): 4.1A @ 25°C

Ciss: 452pF @ 10V

Pd (max): 960mW @ 25°C

Quality and Safety Features

RoHS3 compliant

Supplied in Tape and Reel packaging

Compatibility

Compatible with standard MOSFET circuit designs

Application Areas

Ideal for use in power management, battery charging, and other power switching applications

Product Lifecycle

Active product, no discontinuation or replacement plans identified

Key Reasons to Choose

Excellent performance-to-size ratio in a compact SOT-23-3 package

Low On-Resistance for efficient power handling

Wide operating temperature range of -55°C to 150°C

RoHS3 compliance for use in a variety of applications