ZXMN2B14FHTA - Diodes Incorporated

Manufacturer Part Number

ZXMN2B14FHTA

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

Single N-Channel MOSFET Transistor

Product Features and Performance

MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology

20V Drain-to-Source Voltage (Vdss)

±8V Gate-to-Source Voltage (Vgs)

55mΩ maximum On-Resistance (Rds(on)) at 3.5A, 4.5V

5A continuous Drain Current (Id) at 25°C

872pF maximum Input Capacitance (Ciss) at 10V

1W maximum Power Dissipation at 25°C

-55°C to 150°C Operating Temperature Range

Product Advantages

Compact SOT-23-3 surface-mount package

High current handling capability

Low on-resistance for efficient power switching

Suitable for a wide range of applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20V

Gate-to-Source Voltage (Vgs): ±8V

On-Resistance (Rds(on)): 55mΩ @ 3.5A, 4.5V

Drain Current (Id): 3.5A at 25°C

Input Capacitance (Ciss): 872pF @ 10V

Power Dissipation: 1W at 25°C

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for automated assembly

Compatibility

Compatible with various electronic circuits and power management applications

Application Areas

Switching power supplies

Motor drives

Lighting ballasts

General-purpose power switching

Product Lifecycle

Currently in active production

No immediate plans for discontinuation

Replacement or upgrade options may be available in the future

Several Key Reasons to Choose This Product

High current handling and low on-resistance for efficient power switching

Compact surface-mount package for space-constrained designs

Wide operating temperature range for versatile applications

RoHS3 compliance for environmentally friendly use

Availability in tape and reel packaging for automated assembly