Manufacturer Part Number
ZXMN2F34FHTA
Manufacturer
Diodes Incorporated
Introduction
N-channel enhancement mode power MOSFET
Product Features and Performance
High efficiency and high power density
Low on-resistance
Fast switching speed
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Suitable for high-frequency switching applications
Optimized for low-power, high-efficiency designs
Reliable performance in various operating conditions
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 60mΩ @ 2.5A, 4.5V
Continuous Drain Current (Id): 3.4A @ 25°C
Input Capacitance (Ciss): 277pF @ 10V
Power Dissipation (Pd): 950mW
Quality and Safety Features
RoHS3 compliant
Reliable performance under high-temperature and high-current conditions
Compatibility
Compatible with various electronic circuits and systems that require high-efficiency and high-power density switching
Application Areas
Switching power supplies
DC-DC converters
Motor drives
Lighting ballasts
Wireless charging
Battery management systems
Product Lifecycle
Currently available
No information on discontinuation or replacement
Several Key Reasons to Choose This Product
Excellent efficiency and power density for high-frequency switching applications
Low on-resistance and fast switching speed for improved energy efficiency
Wide operating temperature range for reliable performance in various environments
RoHS3 compliance for environmental friendliness
Suitable for a wide range of electronic circuits and systems
ZXMN3A01ZETEX
ZXMN2F30FHTA MOSDiodes Incorporated