Manufacturer Part Number
ZXMN3A01FTA
Manufacturer
Diodes Incorporated
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
30V Drain-Source Voltage
120mOhm Maximum On-Resistance @ 2.5A, 10V
8A Continuous Drain Current @ 25°C
190pF Maximum Input Capacitance @ 25V
625mW Maximum Power Dissipation
Vgs(th) of 1V @ 250μA
Product Advantages
Low on-resistance for efficient power conversion
High current handling capability
Low power dissipation
Suitable for a wide range of applications
Key Technical Parameters
Drain-Source Voltage: 30V
Maximum Gate-Source Voltage: ±20V
Continuous Drain Current: 1.8A @ 25°C
On-Resistance: 120mOhm @ 2.5A, 10V
Input Capacitance: 190pF @ 25V
Power Dissipation: 625mW
Quality and Safety Features
RoHS3 Compliant
Suitable for surface mount applications
Compatibility
TO-236-3, SC-59, SOT-23-3 package
Can be used in a variety of electronic circuits and systems
Application Areas
Power management
Switching circuits
Motor control
Battery-powered devices
Product Lifecycle
Current product
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent performance characteristics for efficient power conversion
High current handling and low on-resistance for demanding applications
Low power dissipation for improved thermal management
Suitable for a wide range of surface mount applications