Manufacturer Part Number
ZXMN2B01FTA
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Single
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss) of 20V
Gate-Source Voltage (Vgs) range of ±8V
On-Resistance (Rds(on)) of 100mOhm @ 2.4A, 4.5V
Continuous Drain Current (Id) of 2.1A @ 25°C
Input Capacitance (Ciss) of 370pF @ 10V
Power Dissipation of 625mW
Threshold Voltage (Vgs(th)) of 1V @ 250μA
Gate Charge (Qg) of 4.8nC @ 4.5V
Operating Temperature range of -55°C to 150°C
Product Advantages
Low on-resistance for efficient power conversion
High current handling capability
Wide operating temperature range
Compact surface mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±8V
On-Resistance (Rds(on)): 100mOhm
Continuous Drain Current (Id): 2.1A
Input Capacitance (Ciss): 370pF
Power Dissipation: 625mW
Threshold Voltage (Vgs(th)): 1V
Gate Charge (Qg): 4.8nC
Quality and Safety Features
RoHS3 Compliant
Compact SOT-23-3 package
Compatibility
Surface Mount Technology
Application Areas
Power management
Motor control
Switching circuits
General-purpose switching
Product Lifecycle
Current production
Replacements and upgrades may be available
Key Reasons to Choose
Low on-resistance for efficient power conversion
High current handling capability
Wide operating temperature range
Compact surface mount package
RoHS3 compliant
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