Manufacturer Part Number
ZXMN2A03E6TA
Manufacturer
Diodes Incorporated
Introduction
N-Channel MOSFET Transistor
Surface Mount Package
Product Features and Performance
Continuous Drain Current (Id): 3.7A at 25°C
Drain-Source Voltage (Vdss): 20V
On-State Resistance (Rds(on)): 55mΩ at 7.2A, 4.5V
Input Capacitance (Ciss): 837pF at 10V
Power Dissipation: 1.1W at 25°C
Gate Threshold Voltage (Vgs(th)): 700mV at 250μA
Operating Temperature Range: -55°C to 150°C
Product Advantages
High current capability
Low on-state resistance
Compact surface mount package
Key Technical Parameters
FET Type: N-Channel MOSFET
Voltage Drain to Source (Vdss): 20V
Voltage Gate to Source (Vgs): ±12V
On-State Resistance (Rds(on)): 55mΩ
Continuous Drain Current (Id): 3.7A
Quality and Safety Features
RoHS3 Compliant
Industrial-grade quality and reliability
Compatibility
Suitable for a wide range of electronic applications
Application Areas
Power management
Switching circuits
Motor control
Battery charging
Product Lifecycle
Current active product
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High current handling capability
Low on-state resistance for efficient power conversion
Compact surface mount package for space-constrained designs
Wide operating temperature range for harsh environments
Reliable and RoHS-compliant for industrial applications
ZXMN2A03ZETEX