ZXMN2A01FTA - Diodes Incorporated

Manufacturer Part Number

ZXMN2A01FTA

Manufacturer

Diodes Incorporated

Introduction

Discrete N-Channel MOSFET Transistor

Product Features and Performance

N-Channel MOSFET transistor

Low RDS(ON) of 120mOhm @ 4A, 4.5V

Drain-to-source voltage (VDS) of 20V

Gate-to-source voltage (VGS) range of ±12V

Continuous drain current (ID) of 1.9A at 25°C

Input capacitance (CISS) of 303pF at 15V

Power dissipation of 625mW at 25°C

Gate charge (Qg) of 3nC at 4.5V

Product Advantages

Efficient power transfer with low on-resistance

Wide operating voltage and temperature range

Compact surface-mount package

Key Technical Parameters

Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)

FET Type: N-Channel

VDS: 20V

VGS (Max): ±12V

RDS(ON) (Max): 120mOhm @ 4A, 4.5V

ID (Continuous): 1.9A @ 25°C

CISS (Max): 303pF @ 15V

Power Dissipation: 625mW @ 25°C

Qg (Max): 3nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

Reliable operation within the specified temperature range of -55°C to 150°C

Compatibility

Compatible with a wide range of electronic circuits and applications

Application Areas

Suitable for use in power management, switching, and amplification circuits

Applicable in industrial, consumer, and automotive electronics

Product Lifecycle

Current product offering from Diodes Incorporated

No indication of discontinuation or end-of-life

Key Reasons to Choose This Product

Efficient power handling with low on-resistance

Wide operating voltage and temperature range

Compact surface-mount package for space-constrained designs

Reliable performance and RoHS3 compliance for various applications