MMBT3904LP-7B - Diodes Incorporated

Manufacturer Part Number

MMBT3904LP-7B

Manufacturer

Diodes Incorporated

Introduction

Small signal NPN bipolar junction transistor (BJT) in a compact surface mount package.

Product Features and Performance

Suitable for general-purpose amplifier and switching applications

High DC current gain (hFE) of 100 min. at 10 mA, 1 V

Transition frequency (fT) of 300 MHz

Low collector-emitter saturation voltage (VCE(sat)) of 300 mV @ 5 mA, 50 mA

Wide operating temperature range of -55°C to 150°C

Product Advantages

Compact and space-saving 3-pin UFDFN package

Excellent electrical performance for its size

Automotive-grade AEC-Q101 qualification

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 40 V

Collector Current (IC): 200 mA

Power Dissipation: 250 mW

Junction Temperature (TJ): -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for automated assembly

Compatibility

Compatible with standard NPN bipolar transistor applications

Application Areas

General-purpose amplifier and switching circuits

Automotive electronics

Industrial control systems

Consumer electronics

Product Lifecycle

This product is in active production and is not nearing discontinuation.

Replacement or upgrade options are available from the manufacturer.

Key Reasons to Choose This Product

Excellent electrical performance in a compact surface mount package

Automotive-grade AEC-Q101 qualification for reliability

Wide operating temperature range and power handling capability

Availability in convenient tape and reel packaging for automated assembly