MMBT3904LT3G - onsemi

Manufacturer Part Number

MMBT3904LT3G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

RoHS3 Compliant

SOT-23-3 (TO-236) Package

Operating Temperature: -55°C to 150°C

Power Rating: 300 mW

Collector-Emitter Breakdown Voltage: 40 V

Collector Current (Max): 200 mA

Collector-Emitter Saturation Voltage: 300 mV @ 5 mA, 50 mA

Transistor Type: NPN

DC Current Gain (hFE): 100 min. @ 10 mA, 1 V

Transition Frequency: 300 MHz

Surface Mount Mounting

Product Advantages

Compact SOT-23-3 package

Wide operating temperature range

High power and voltage ratings

High current handling capability

High current gain and transition frequency

Suitable for various electronic applications

Key Technical Parameters

Package: TO-236-3, SC-59, SOT-23-3

Supplier Device Package: SOT-23-3 (TO-236)

Packaging: Tape & Reel (TR)

Quality and Safety Features

RoHS3 compliant

Meets industry standards for quality and reliability

Compatibility

Commonly used in a variety of electronic circuits and devices

Application Areas

Amplifiers

Switches

Logic circuits

General-purpose electronics

Product Lifecycle

This product is an active and widely used component

Replacements and upgrades may be available from the manufacturer or third-party suppliers

Several Key Reasons to Choose This Product

Reliable and well-proven design

Compact and space-efficient package

Wide operating temperature range

High power and voltage handling capabilities

Suitable for a broad range of electronic applications

Readily available and easily integrated into designs