MMBT3904LP-7 - Diodes Incorporated

Manufacturer Part Number

MMBT3904LP-7

Manufacturer

Diodes Incorporated

Introduction

A small-signal NPN bipolar junction transistor (BJT) suitable for general-purpose amplifier and switching applications.

Product Features and Performance

High frequency response up to 300 MHz

Low collector-emitter saturation voltage of 300 mV @ 5 mA, 50 mA

High DC current gain of 100 min. @ 10 mA, 1 V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Robust design for automotive and industrial applications

Compact X1-DFN1006-3 package for space-constrained designs

RoHS3 compliant for environmentally-friendly use

Key Technical Parameters

Power rating: 250 mW

Collector-emitter breakdown voltage: 40 V

Collector current: 200 mA

Transistor type: NPN

Quality and Safety Features

Qualified to AEC-Q101 automotive standard

RoHS3 compliant for restricted substances

Compatibility

Compatible with standard BJT circuit designs

Suitable for use in amplifiers, switches, and other general-purpose applications

Application Areas

Automotive electronics

Industrial controls

Consumer electronics

General-purpose amplifier and switching circuits

Product Lifecycle

Currently in production

No plans for discontinuation

Replacement parts and upgrades available if needed

Key Reasons to Choose This Product

High-frequency performance up to 300 MHz

Robust design for automotive and industrial use

Small, space-saving X1-DFN1006-3 package

Compliant with RoHS3 and AEC-Q101 standards

Widely compatible with standard BJT circuit designs

Readily available with replacement and upgrade options