Manufacturer Part Number
MMBT3904LT1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
Small form factor in SOT-23-3 (TO-236) package
Power rating up to 225 mW
Collector-Emitter Breakdown Voltage up to 40 V
Collector Current up to 200 mA
Low Collector-Emitter Saturation Voltage
High DC Current Gain up to 100
Transition Frequency up to 300 MHz
Product Advantages
Compact surface mount design
High power and current handling capability
High frequency operation
Reliable performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 40 V (max)
Collector Current: 200 mA (max)
Collector-Emitter Saturation Voltage: 300 mV (max) @ 5 mA, 50 mA
DC Current Gain: 100 (min) @ 10 mA, 1 V
Transition Frequency: 300 MHz
Quality and Safety Features
Compliant with RoHS and other environmental regulations
Reliable and stable performance
Compatibility
Compatible with various electronic circuits and systems requiring a high-performance bipolar transistor
Application Areas
Amplifiers
Switches
Logic gates
Driver circuits
General-purpose electronics
Product Lifecycle
Currently in active production
Replacements and upgrades available
Key Reasons to Choose This Product
Compact and space-efficient surface mount package
High power and current handling capabilities
Excellent high-frequency performance
Reliable and stable operation
Wide range of applications in electronic circuits