MMBT3904LT1 - Infineon Technologies

Manufacturer Part Number

MMBT3904LT1

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

Small form factor in SOT-23-3 (TO-236) package

Power rating up to 225 mW

Collector-Emitter Breakdown Voltage up to 40 V

Collector Current up to 200 mA

Low Collector-Emitter Saturation Voltage

High DC Current Gain up to 100

Transition Frequency up to 300 MHz

Product Advantages

Compact surface mount design

High power and current handling capability

High frequency operation

Reliable performance

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 40 V (max)

Collector Current: 200 mA (max)

Collector-Emitter Saturation Voltage: 300 mV (max) @ 5 mA, 50 mA

DC Current Gain: 100 (min) @ 10 mA, 1 V

Transition Frequency: 300 MHz

Quality and Safety Features

Compliant with RoHS and other environmental regulations

Reliable and stable performance

Compatibility

Compatible with various electronic circuits and systems requiring a high-performance bipolar transistor

Application Areas

Amplifiers

Switches

Logic gates

Driver circuits

General-purpose electronics

Product Lifecycle

Currently in active production

Replacements and upgrades available

Key Reasons to Choose This Product

Compact and space-efficient surface mount package

High power and current handling capabilities

Excellent high-frequency performance

Reliable and stable operation

Wide range of applications in electronic circuits