MMBT3904LT1G - onsemi

Manufacturer Part Number

MMBT3904LT1G

Manufacturer

onsemi

Introduction

General-purpose NPN bipolar junction transistor (BJT)

Designed for a wide variety of switching and amplifying applications

Product Features and Performance

High-frequency performance up to 300 MHz

Low collector-emitter saturation voltage

High DC current gain (hFE) of 100 or more

Low power consumption with maximum power rating of 300 mW

Wide operating temperature range of -55°C to 150°C

Product Advantages

Reliable and stable performance

Compact surface mount SOT-23-3 package

RoHS compliant design

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 40 V

Collector Current (Max): 200 mA

Collector-Emitter Saturation Voltage (Max): 300 mV @ 5 mA, 50 mA

DC Current Gain (hFE) (Min): 100 @ 10 mA, 1 V

Transition Frequency: 300 MHz

Quality and Safety Features

RoHS3 compliant

Reliable construction and quality control measures

Compatibility

Widely compatible with various electronic circuits and devices

Application Areas

Ideal for use in a wide range of switching and amplifying applications, such as:

- Analog and digital circuits

- Power supplies

- Inverters

- Audio amplifiers

- Radio frequency (RF) circuits

Product Lifecycle

This product is an active and widely available component

Replacements and upgrades are readily available from onsemi and other manufacturers

Several Key Reasons to Choose This Product

High-frequency performance up to 300 MHz for efficient switching and amplification

Low collector-emitter saturation voltage for improved energy efficiency

High DC current gain (hFE) of 100 or more for reliable and stable operation

Compact surface mount SOT-23-3 package for space-saving design

Wide operating temperature range of -55°C to 150°C for versatile applications

RoHS compliance for environmentally friendly design

Availability of replacements and upgrades for long-term product support