Manufacturer Part Number
DXT458P5-13
Manufacturer
Diodes Incorporated
Introduction
High-voltage, high-gain NPN bipolar junction transistor (BJT) suitable for a wide range of applications.
Product Features and Performance
Designed for high-voltage, high-gain applications
Wide operating temperature range: -55°C to 150°C
Low collector-emitter saturation voltage
High DC current gain (hFE)
High transition frequency (fT)
Product Advantages
Exceptional voltage and current handling capabilities
Excellent thermal performance
Reliable and robust design
Key Technical Parameters
Power Rating: 2.8 W
Collector-Emitter Breakdown Voltage: 400 V
Collector Current (Max): 300 mA
Collector Cutoff Current (Max): 100 nA
Collector-Emitter Saturation Voltage: 500 mV @ 6 mA, 50 mA
DC Current Gain (hFE): 100 @ 50 mA, 10 V
Transition Frequency (fT): 50 MHz
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Suitable for high-voltage, high-gain applications such as power supplies, motor drivers, and switching circuits
Product Lifecycle
This product is an active and available part, with no known plans for discontinuation.
Several Key Reasons to Choose This Product
Exceptional voltage and current handling capabilities
Excellent thermal performance for reliable operation
High DC current gain and transition frequency for high-speed applications
Robust and reliable design for long-term use
RoHS3 compliance for environmental sustainability
Compatibility with a wide range of electronic systems and circuits
