DXT2222A-13 - Diodes Incorporated

Manufacturer Part Number

DXT2222A-13

Manufacturer

Diodes Incorporated

Introduction

High-performance NPN bipolar junction transistor (BJT) for a wide range of applications.

Product Features and Performance

Supports high collector current up to 600 mA

Withstands high collector-emitter voltage up to 40V

Operates across a wide temperature range of -55°C to 150°C

Exhibits low collector-emitter saturation voltage (Vce(sat)) of 1V @ 50mA, 500mA

Provides high current gain (hFE) of 100 @ 150mA, 10V

Achieves high transition frequency (fT) of 300 MHz

Product Advantages

Robust design for reliable performance

Compact surface-mount package (SOT-89-3)

Suitable for a variety of electronic circuits and applications

Key Technical Parameters

Power Rating: 1 W

Collector-Emitter Breakdown Voltage (VCEO): 40 V

Collector Current (IC): 600 mA

Collector Cutoff Current (ICBO): 10 nA

Transistor Type: NPN

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

This transistor can be used in various electronic circuits and applications, including:

Amplifiers

Switches

Logic gates

Power supplies

Regulators

Application Areas

Consumer electronics

Industrial controls

Automotive electronics

Telecommunications equipment

Product Lifecycle

The DXT2222A-13 is an actively produced and supported product. Replacement or upgraded models may be available in the future.

Key Reasons to Choose This Product

High-performance characteristics for versatile applications

Robust design and reliable operation

Compact and efficient surface-mount package

Wide operating temperature range

RoHS compliance for environmental friendliness