DXT5551-13 - Diodes Incorporated

Manufacturer Part Number

DXT5551-13

Manufacturer

Diodes Incorporated

Introduction

High-performance NPN bipolar junction transistor (BJT) in a compact surface-mount package.

Product Features and Performance

Wide collector-emitter breakdown voltage (VCEO) of 160V

High collector current (IC) rating of 600mA

Low collector-emitter saturation voltage (VCE(sat)) of 200mV @ 5mA, 50mA

High current gain (hFE) of 80 min. @ 10mA, 5V

High transition frequency (fT) of 300MHz

Operates over a wide temperature range of -55°C to 150°C

Product Advantages

Suitable for a variety of power amplifier, switching, and driver applications

Compact surface-mount packaging for efficient board space utilization

Robust design with high voltage and current ratings

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 160V

Collector Current (IC): 600mA

Collector-Emitter Saturation Voltage (VCE(sat)): 200mV @ 5mA, 50mA

Current Gain (hFE): 80 min. @ 10mA, 5V

Transition Frequency (fT): 300MHz

Quality and Safety Features

RoHS3 compliant

Encased in a durable SOT-89-3 package

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Power amplifiers

Switching circuits

Driver circuits

General-purpose amplification

Product Lifecycle

Currently available

No indication of discontinuation or replacement

Several Key Reasons to Choose This Product

High voltage and current handling capabilities for a wide range of applications.

Excellent electrical performance with low saturation voltage and high current gain.

Compact surface-mount package for efficient board space utilization.

Robust design and wide operating temperature range.

RoHS3 compliance for environmental safety.