Manufacturer Part Number
DXT2010P5-13
Manufacturer
Diodes Incorporated
Introduction
High-performance NPN bipolar junction transistor (BJT) in a PowerDI 5 package, suitable for a wide range of electronic applications.
Product Features and Performance
Operating temperature range of -55°C to 150°C
Maximum power dissipation of 3.2W
Collector-emitter breakdown voltage up to 60V
Maximum collector current of 6A
Collector cutoff current of 20nA (max)
Low collector-emitter saturation voltage of 260mV @ 300mA, 6A
DC current gain (hFE) of 100 (min) @ 2A, 1V
Transition frequency of 130MHz
Product Advantages
High power handling capability
Low saturation voltage for efficient power conversion
Robust temperature range for diverse applications
Small and compact PowerDI 5 package for space-constrained designs
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 60V
Collector Current (Max): 6A
Collector Cutoff Current (Max): 20nA
Collector-Emitter Saturation Voltage: 260mV
DC Current Gain (hFE): 100 (min)
Transition Frequency: 130MHz
Quality and Safety Features
RoHS3 compliant
Reliable performance across wide temperature range
Compatibility
Surface mount package suitable for automated assembly
Application Areas
Power amplifiers
Switching circuits
Motor control
Industrial electronics
Automotive electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
High power handling capability for efficient power conversion
Low saturation voltage for improved energy efficiency
Wide operating temperature range for diverse applications
Small and compact package for space-constrained designs
Reliable performance backed by the manufacturer's quality standards
