DXT2012P5-13 - Diodes Incorporated

Manufacturer Part Number

DXT2012P5-13

Manufacturer

Diodes Incorporated

Introduction

High-performance PNP bipolar junction transistor (BJT) with low collector-emitter saturation voltage and high current gain.

Product Features and Performance

High power handling capability up to 3.2W

Low collector-emitter saturation voltage of 250mV @ 500mA, 5A

High current gain of 100 @ 2A, 1V

High transition frequency of 120MHz

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent power efficiency due to low saturation voltage

Suitable for high-current switching and amplification applications

Robust performance across a wide temperature range

Compact surface mount package for high-density PCB designs

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 60V

Collector Current (Max): 5.5A

Collector Cutoff Current (Max): 20nA

DC Current Gain: 100 (min) @ 2A, 1V

Quality and Safety Features

RoHS3 compliant

Reliable and robust design

ESD protection

Compatibility

Compatible with various electronic circuit designs requiring high-power PNP transistors

Application Areas

Power supplies

Motor control

Switching circuits

Audio amplifiers

Industrial control systems

Product Lifecycle

This product is currently in active production and is not nearing discontinuation.

Replacement or upgrade options are available from the manufacturer.

Key Reasons to Choose This Product

Excellent power handling and efficiency

High current gain and frequency performance

Wide operating temperature range

Compact and reliable surface mount package

RoHS3 compliance for environmental responsibility

Availability of replacement and upgrade options