Manufacturer Part Number
DMN26D0UFB4-7
Manufacturer
Diodes Incorporated
Introduction
The DMN26D0UFB4-7 is a N-channel MOSFET transistor manufactured by Diodes Incorporated.
Product Features and Performance
20V Drain-to-Source Voltage (Vdss)
±10V Gate-to-Source Voltage (Vgs)
3Ω Maximum On-Resistance (Rds(on)) at 100mA, 4.5V
230mA Continuous Drain Current (Id) at 25°C
1pF Maximum Input Capacitance (Ciss) at 15V
350mW Maximum Power Dissipation at 25°C
Operating Temperature Range: -55°C to 150°C
Product Advantages
Low on-resistance for efficient power switching
Compact 3-terminal X2-DFN1006-3 package
Suitable for space-constrained applications
RoHS3 compliant
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±10V
On-Resistance (Rds(on)): 3Ω @ 100mA, 4.5V
Continuous Drain Current (Id): 230mA @ 25°C
Input Capacitance (Ciss): 14.1pF @ 15V
Power Dissipation: 350mW @ 25°C
Quality and Safety Features
Compliant with RoHS3 environmental directives
Suitable for reflow soldering in surface-mount applications
Compatibility
Compatible with a wide range of electronic circuits and systems that require a small, efficient N-channel MOSFET
Application Areas
Power management circuits
Switching applications
Amplifier circuits
General-purpose electronics
Product Lifecycle
This product is currently in production and widely available
Replacement or upgraded models may become available in the future as technology advances
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
Compact package size for space-constrained designs
Wide operating temperature range for diverse applications
RoHS3 compliance for environmentally-friendly use
Proven reliability and performance from a reputable manufacturer