DMN2600UFB-7 - Diodes Incorporated

Manufacturer Part Number

DMN2600UFB-7

Manufacturer

Diodes Incorporated

Introduction

N-Channel MOSFET transistor

Designed for power switching and amplification applications

Product Features and Performance

Operating temperature range: -55°C to 150°C

Drain-to-source voltage (Vdss): 25V

Maximum gate-to-source voltage (Vgs): ±8V

On-resistance (Rds(on)): 350mΩ @ 200mA, 4.5V

Continuous drain current (Id): 1.3A @ 25°C

Input capacitance (Ciss): 70.13pF @ 15V

Power dissipation (max): 540mW

Gate charge (Qg): 0.85nC @ 4.5V

Product Advantages

Low on-resistance for high efficiency

Fast switching speed

Compact surface-mount package

Key Technical Parameters

MOSFET technology

N-channel

Vgs(th) (max): 1V @ 250µA

Drive voltage (max Rds(on), min Rds(on)): 1.8V, 4.5V

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Mounting type: Surface mount

Application Areas

Power switching and amplification

Voltage regulation

Motor control

Lighting control

Product Lifecycle

Active product

Replacements and upgrades available

Key Reasons to Choose This Product

Excellent performance-to-size ratio

Efficient power handling

Reliable and durable construction

Compatibility with common power electronics applications