DMN26D0UDJ-7 - Diodes Incorporated

Manufacturer Part Number

DMN26D0UDJ-7

Manufacturer

Diodes Incorporated

Introduction

Dual N-Channel MOSFET transistor in SOT-963 package

Product Features and Performance

Dual N-Channel MOSFET configuration

Low on-resistance (RDS(ON)) of 3Ω @ 100mA, 4.5V

Low input capacitance (Ciss) of 14.1pF @ 15V

Logic level gate with maximum threshold voltage (Vgs(th)) of 1.05V @ 250µA

Wide operating temperature range of -55°C to 150°C

Product Advantages

Compact SOT-963 surface mount package

Efficient power handling with low power dissipation

Suitable for low-power, high-density circuit designs

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20V

Continuous Drain Current (Id) @ 25°C: 240mA

Power Dissipation: 300mW

Quality and Safety Features

RoHS3 compliant

Suitable for Tape & Reel packaging

Compatibility

Compatible with various low-power, high-density circuit applications

Application Areas

Switching circuits

Logic-level circuits

Power management applications

General-purpose amplifier and driver circuits

Product Lifecycle

Current production model

Replacement or upgrade options may be available

Key Reasons to Choose This Product

Compact and efficient dual MOSFET design

Low on-resistance and input capacitance for improved performance

Wide operating temperature range for diverse applications

RoHS3 compliance for environmental sustainability

Availability in Tape & Reel packaging for efficient manufacturing