DMN2990UDJ-7 - Diodes Incorporated

Manufacturer Part Number

DMN2990UDJ-7

Manufacturer

Diodes Incorporated

Introduction

Dual N-Channel Logic Level MOSFET Transistor

Product Features and Performance

20V Drain-to-Source Voltage (Vdss)

990mΩ Maximum On-Resistance (RDS(on)) at 100mA, 4.5V

6pF Maximum Input Capacitance (Ciss) at 16V

5nC Maximum Gate Charge (Qg) at 4.5V

Operating Temperature Range: -55°C to 150°C

350mW Maximum Power Dissipation

Product Advantages

Logic Level Gate for Easy Drive

Compact SOT-963 Surface Mount Package

Rugged MOSFET Design for Reliable Performance

Key Technical Parameters

20V Drain-to-Source Voltage (Vdss)

990mΩ Maximum On-Resistance (RDS(on)) at 100mA, 4.5V

6pF Maximum Input Capacitance (Ciss) at 16V

5nC Maximum Gate Charge (Qg) at 4.5V

450mA Continuous Drain Current (ID) at 25°C

1V Maximum Gate-to-Source Threshold Voltage (Vgs(th)) at 250μA

Quality and Safety Features

RoHS3 Compliant

Reliable MOSFET Design

Compatibility

Compatible with various electronic circuits and systems requiring dual N-Channel logic level MOSFET transistors.

Application Areas

Power management circuits

Motor control systems

Switching circuits

General-purpose electronic applications

Product Lifecycle

The DMN2990UDJ-7 is an active product, and Diodes Incorporated continues to provide support and availability. Replacement or upgrade options may be available.

Key Reasons to Choose This Product

Compact and efficient SOT-963 surface mount package

Excellent on-resistance and input capacitance performance

Wide operating temperature range (-55°C to 150°C)

Reliable MOSFET design for robust and dependable operation

Logic level gate for easy drive and integration into various circuits