Manufacturer Part Number
DMN2990UFA-7B
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss): 20V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Continuous Drain Current (Id) @ 25°C: 510mA
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V
Power Dissipation (Max): 400mW
Vgs(th) (Max) @ Id: 1V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Product Advantages
ROHS3 Compliant
Surface Mount Packaging
Wide Operating Temperature Range: -55°C to 150°C
Key Technical Parameters
Package: 3-XFDFN (X2-DFN0806-3)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Quality and Safety Features
RoHS3 Compliant
Compatibility
Universal compatibility for surface mount applications
Application Areas
Power management
Switching applications
General purpose amplification
Product Lifecycle
Currently in production, no discontinuation or replacement plans announced
Key Reasons to Choose
Excellent performance characteristics
Small, surface mount package
Compliance with RoHS3 regulation
Wide operating temperature range