Manufacturer Part Number
DMN24H11DS-7
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss) of 240V
Vgs (Max) of ±20V
Rds On (Max) of 11Ohm @ 300mA, 10V
Continuous Drain Current (Id) of 270mA @ 25°C
Input Capacitance (Ciss) of 76.8pF @ 25V
Power Dissipation (Max) of 750mW
Vgs(th) (Max) of 3V @ 250A
Drive Voltage (Max Rds On, Min Rds On) of 4.5V, 10V
Gate Charge (Qg) of 3.7nC @ 10V
Product Advantages
Automotive and AEC-Q101 qualified
Compact SOT-23-3 package
Suitable for high-voltage and high-power applications
Key Technical Parameters
Voltage, Current, Capacitance, Power Dissipation, Gate Charge
Quality and Safety Features
RoHS3 compliant
Operating Temperature range of -55°C to 150°C
Compatibility
Surface mount package
Compatible with various high-voltage and high-power applications
Application Areas
Automotive electronics
Industrial electronics
Power supplies
Motor control
Lighting control
Product Lifecycle
Active product
No information on discontinuation or replacements/upgrades
Several Key Reasons to Choose This Product
Automotive and AEC-Q101 qualified for high-reliability applications
Wide voltage and temperature operating range
Compact surface mount package
Suitable for high-voltage and high-power circuit designs