Manufacturer Part Number
DMN2450UFB4-7B
Manufacturer
Diodes Incorporated
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
20V Drain-to-Source Voltage
400mΩ On-Resistance
1A Continuous Drain Current
56pF Input Capacitance
500mW Power Dissipation
-55°C to 150°C Operating Temperature Range
Fast Switching Speed
Product Advantages
Compact Surface Mount Package
Low On-Resistance for Efficient Power Switching
Wide Operating Temperature Range
Suitable for Diverse Electronic Circuit Applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 400mΩ
Continuous Drain Current (Id): 1A
Input Capacitance (Ciss): 56pF
Power Dissipation (Pd): 500mW
Threshold Voltage (Vgs(th)): 900mV
Quality and Safety Features
RoHS3 Compliant
Reliable MOSFET Technology
Compatibility
Suitable for a wide range of electronic circuit designs
Application Areas
Power Management Circuits
Switching Power Supplies
Motor Control
Battery Charging Circuits
General Purpose Switching Applications
Product Lifecycle
Current product, no plans for discontinuation
Replacement parts and upgrades available
Key Reasons to Choose
Excellent performance-to-cost ratio
Compact and reliable surface mount package
Wide operating temperature range
Suitable for diverse electronic circuit applications
RoHS3 compliance for environmental responsibility