DMHC10H170SFJ-13 - Diodes Incorporated

Manufacturer Part Number

DMHC10H170SFJ-13

Manufacturer

Diodes Incorporated

Introduction

High-performance half-bridge MOSFET array

Suitable for power management and control applications

Product Features and Performance

2 N-channel and 2 P-channel MOSFETs in a single package

Low on-resistance (Rds(on)) of 160mΩ

High drain-to-source voltage rating of 100V

Continuous drain current of 2.9A (N-channel) and 2.3A (P-channel) at 25°C

Fast switching speed and low gate charge of 9.7nC

Operating temperature range of -55°C to 150°C

Product Advantages

Space-saving integrated half-bridge solution

Reduces component count and simplifies design

Reliable and efficient power conversion

Suitable for a wide range of applications

Key Technical Parameters

MOSFET technology: Metal Oxide

Configuration: 2 N-channel and 2 P-channel

Drain-to-Source Voltage (Vdss): 100V

On-Resistance (Rds(on)): 160mΩ

Continuous Drain Current (Id): 2.9A (N-channel), 2.3A (P-channel)

Input Capacitance (Ciss): 1167pF

Gate Threshold Voltage (Vgs(th)): 3V

Gate Charge (Qg): 9.7nC

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Surface mount package: 12-VDFN Exposed Pad

Application Areas

Power management and control circuits

Motor drives

Switching power supplies

Inverters and converters

Product Lifecycle

Current product, not nearing discontinuation

Replacement and upgrade options available from the manufacturer

Key Reasons to Choose This Product

Compact integrated half-bridge solution

Excellent power handling and efficiency

Reliable and wide operating temperature range

Ease of design and reduced component count

Proven quality and safety features