Manufacturer Part Number
AUIRF7313QTR
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
2 N-Channel (Dual) configuration
30V Drain to Source Voltage (Vdss)
29mOhm Rds On (Max) @ 6.9A, 10V
9A Continuous Drain Current (Id) @ 25°C
755pF Input Capacitance (Ciss) (Max) @ 25V
3V Vgs(th) (Max) @ 250A
33nC Gate Charge (Qg) (Max) @ 10V
-55°C ~ 175°C (TJ) Operating Temperature
Product Advantages
Logic Level Gate FET Feature
Surface Mount Mounting Type
Bulk Package
Key Technical Parameters
MOSFET (Metal Oxide) Technology
4W Power Max
Quality and Safety Features
8-SOIC (0.154", 3.90mm Width) Package
8-SOIC (0.154", 3.90mm Width) Supplier Device Package
Compatibility
HEXFET Series
Application Areas
Suitable for a wide range of power management and control applications
Product Lifecycle
Current production, no indication of discontinuation
Key Reasons to Choose This Product
Reliable Infineon Technologies brand
Efficient power management with low Rds On
Wide operating temperature range
Compact surface mount package
Dual N-Channel configuration for design flexibility