Manufacturer Part Number
AUIRF7103QTR
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel HEXFET power MOSFET designed for automotive and industrial applications
Product Features and Performance
Dual N-channel MOSFET in 8-SOIC package
Optimized for high-frequency switching
Low on-resistance for high efficiency
High reliability for harsh environments
Rated for up to 2.4W power dissipation
Operating temperature range of -55°C to 175°C
Product Advantages
Compact surface mount package
Excellent thermal performance
High power density
Robust design for automotive and industrial use
Key Technical Parameters
50V drain-source voltage
130mΩ maximum on-resistance
3A continuous drain current
255pF maximum input capacitance
15nC maximum gate charge
Quality and Safety Features
ROHS3 compliant
AEC-Q101 qualified for automotive applications
Rigorous quality and reliability testing
Compatibility
Compatible with a wide range of industrial and automotive electronic systems
Application Areas
Motor drives
Power supplies
Switching regulators
General industrial and automotive electronics
Product Lifecycle
This product is an active, in-production part. No plans for discontinuation at this time. Replacement or upgrade options may be available from Infineon.
Key Reasons to Choose This Product
Optimized for high-frequency, high-efficiency switching
Robust design for harsh environments
Compact surface mount package for space-constrained applications
High power density and thermal performance
Automotive and industrial grade quality and reliability