Manufacturer Part Number
AUIRF7341QTR
Manufacturer
Infineon Technologies
Introduction
High-performance dual N-channel MOSFET transistor
Designed for automotive and industrial applications
Product Features and Performance
Operates at high temperatures up to 175°C
Capable of handling continuous drain current up to 5.1A
Extremely low on-resistance (RDS(on) of 50 mΩ)
Fast switching speed and low gate charge (Qg of 44 nC)
Tight threshold voltage (Vgs(th)) tolerance for improved reliability
Product Advantages
Robust design for automotive and industrial use
Excellent thermal management capabilities
Efficient power handling and low power losses
Reliable and long-lasting performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 55V
Continuous Drain Current (ID): 5.1A
On-Resistance (RDS(on)): 50 mΩ
Input Capacitance (Ciss): 780 pF
Gate Charge (Qg): 44 nC
Operating Temperature Range: -55°C to 175°C
Quality and Safety Features
RoHS3 compliant
Manufactured to AEC-Q101 automotive standard
Reliable HEXFET technology
Compatibility
Suitable for a wide range of automotive and industrial applications
Can be used as a replacement or upgrade for similar MOSFET devices
Application Areas
Motor control
Power supplies
Lighting systems
Automotive electronics
Industrial automation
Product Lifecycle
Current production model, not nearing discontinuation
Replacement or upgrade options available from Infineon
Key Reasons to Choose This Product
Excellent performance and reliability for demanding applications
Robust design and thermal capabilities for high-temperature operation
Efficient power handling and low power losses
Tight parameter control and AEC-Q101 qualification
Wide compatibility and availability of replacement options
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