Manufacturer Part Number
AUIRF7343QTR
Manufacturer
Infineon Technologies
Introduction
N and P-Channel MOSFET Array
Product Features and Performance
55V Drain to Source Voltage (Vdss)
50mOhm Max On-Resistance (Rds(on)) at 4.7A, 10V
7A Continuous Drain Current (Id) at 25°C
740pF Max Input Capacitance (Ciss) at 25V
36nC Max Gate Charge (Qg) at 10V
Logic Level Gate (Vgs(th) 1V at 250A)
Temperature Range: -55°C to 150°C
Product Advantages
High efficiency and low power loss
Compact 8-SOIC surface mount package
Suitable for a wide range of power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 55V
On-Resistance (Rds(on)): 50mOhm @ 4.7A, 10V
Continuous Drain Current (Id): 4.7A at 25°C
Input Capacitance (Ciss): 740pF @ 25V
Gate Charge (Qg): 36nC @ 10V
Gate Threshold Voltage (Vgs(th)): 1V @ 250A
Quality and Safety Features
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology
Surface mount 8-SOIC package
Wide operating temperature range: -55°C to 150°C
Compatibility
Suitable for a variety of power management and control applications
Application Areas
Power supplies
Motor drives
Lighting control
Automotive electronics
Industrial automation
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available
Key Reasons to Choose This Product
High efficiency and low power loss
Compact surface mount package
Wide operating temperature range
Suitable for a variety of power applications
Proven MOSFET technology from a reputable manufacturer
AUIRF7478QTRPBFCypress Semiconductor (Infineon Technologies)