AUIRF7379QTR - Infineon Technologies

Manufacturer Part Number

AUIRF7379QTR

Manufacturer

Infineon Technologies

Introduction

This is a discrete semiconductor product, specifically a transistor FET, MOSFET array.

Product Features and Performance

RoHS3 compliant

8-SOIC (0.154", 3.90mm Width) package

N and P-Channel configuration

30V Drain to Source Voltage (Vdss)

45mOhm maximum On-Resistance (Rds On) at 5.8A and 10V

MOSFET (Metal Oxide) technology

8A continuous Drain Current (Id) at 25°C

520pF maximum Input Capacitance (Ciss) at 25V

Logic Level Gate FET feature

3V maximum Gate-Source Threshold Voltage (Vgs(th)) at 250A

25nC maximum Gate Charge (Qg) at 10V

Product Advantages

Provides high-performance switching capabilities

Supports a wide range of operating temperatures from -55°C to 150°C

Offers low on-resistance for efficient power conversion

Integrates multiple transistors in a single package for space-saving design

Key Technical Parameters

Power Rating: 2.5W

Operating Temperature Range: -55°C to 150°C

Packaging: Tape & Reel (TR)

Quality and Safety Features

RoHS3 compliant, ensuring environmental responsibility

Compatibility

Surface mount design for easy integration into various circuit boards and systems

Application Areas

Suitable for a wide range of power management and control applications, such as:

- Switch-mode power supplies

- Motor drives

- Lighting controls

- Industrial and consumer electronics

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer as technology evolves.

Key Reasons to Choose This Product

High performance and efficiency due to low on-resistance

Wide operating temperature range for diverse applications

Compact and space-saving package design

RoHS3 compliance for environmentally-friendly use

Proven reliability and quality from Infineon Technologies