AUIRF7478QTR - Infineon Technologies

Manufacturer Part Number

AUIRF7478QTR

Manufacturer

Infineon Technologies

Introduction

N-Channel MOSFET transistor

Part of the HEXFET series

Product Features and Performance

Wide operating temperature range: -55°C to 150°C (TJ)

Low on-resistance: 26mΩ @ 4.2A, 10V

High drain-to-source voltage: 60V

High continuous drain current: 7A @ 25°C (Ta)

Low input capacitance: 1740pF @ 25V

Low power dissipation: 2.5W (Ta)

Product Advantages

Efficient power handling

Compact surface mount package

Reliable high-temperature operation

Suitable for a variety of power conversion and control applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 60V

Gate-to-Source Voltage (Vgs Max): ±20V

Threshold Voltage (Vgs(th) Max): 3V @ 250A

On-Resistance (Rds(on) Max): 26mΩ @ 4.2A, 10V

Input Capacitance (Ciss Max): 1740pF @ 25V

Gate Charge (Qg Max): 31nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

Adherence to safety and reliability standards

Compatibility

Surface mount 8-SOIC package

Compatible with various power electronics and control circuits

Application Areas

Power conversion

Motor control

Switching power supplies

Industrial and consumer electronics

Product Lifecycle

Current production model

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent power handling and efficiency

Reliable high-temperature operation

Compact and easy to integrate surface mount package

Suitable for a wide range of power electronics applications