SI1563DH-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI1563DH-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Products

Transistors FETs, MOSFETs Arrays

Product Features and Performance

ROHS3 Compliant

6-TSSOP, SC-88, SOT-363 package

TrenchFET series

Tape & Reel (TR) packaging

-55°C ~ 150°C operating temperature

570mW maximum power

N and P-Channel configuration

20V drain to source voltage

280mOhm maximum on-resistance @ 1.13A, 4.5V

MOSFET (Metal Oxide) technology

13A, 880mA continuous drain current @ 25°C

Logic Level Gate FET feature

1V maximum gate-source threshold voltage @ 100A

2nC maximum gate charge @ 4.5V

Surface Mount mounting

Product Advantages

High power handling capability

Low on-resistance

Wide temperature range

Suitable for logic-level control

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Rds On (Max) @ Id, Vgs: 280mOhm @ 1.13A, 4.5V

Current Continuous Drain (Id) @ 25°C: 1.13A, 880mA

Vgs(th) (Max) @ Id: 1V @ 100A

Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V

Quality and Safety Features

ROHS3 Compliant

Compatibility

N and P-Channel configuration

Application Areas

Suitable for a wide range of power management and control applications

Product Lifecycle

No information on discontinuation or availability of replacements/upgrades

Several Key Reasons to Choose This Product

High power handling capability

Low on-resistance

Wide temperature range

Suitable for logic-level control

ROHS3 Compliant