Manufacturer Part Number
SI4590DY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Products, Transistors - FETs, MOSFETs - Arrays
Product Features and Performance
N and P-Channel
Drain to Source Voltage (Vdss) of 100V
Rds On (Max) @ Id, Vgs of 57mOhm @ 2A, 10V
Current Continuous Drain (Id) @ 25°C of 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds of 360pF @ 50V
Vgs(th) (Max) @ Id of 2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs of 11.5nC @ 10V
Product Advantages
High power density
Low on-resistance
Fast switching speed
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Rds On (Max) @ Id, Vgs: 57mOhm @ 2A, 10V
Current Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 50V
Vgs(th) (Max) @ Id: 2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount
Application Areas
Suitable for a wide range of power management and control applications
Product Lifecycle
Current product
Replacements and upgrades available
Key Reasons to Choose This Product
High power density
Low on-resistance
Fast switching speed
Reliable RoHS3 compliance
Compatibility with surface mount applications
Availability of replacements and upgrades