SI4618DY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4618DY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Arrays

Product Features and Performance

2 N-Channel (Half Bridge) configuration

MOSFET (Metal Oxide) technology

Drain to Source Voltage (Vdss) of 30V

Rds On (Max) of 17mOhm @ 8A, 10V

Current Continuous Drain (Id) of 8A @ 25°C, 15.2A

Input Capacitance (Ciss) (Max) of 1535pF @ 15V

Vgs(th) (Max) of 2.5V @ 1mA

Gate Charge (Qg) (Max) of 44nC @ 10V

Operating Temperature of -55°C ~ 150°C (TJ)

Power Max of 1.98W, 4.16W

Product Advantages

High performance MOSFET array

Compact 8-SOIC surface mount package

Suitable for a wide range of power and control applications

Key Technical Parameters

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

2 N-Channel (Half Bridge) configuration

MOSFET (Metal Oxide) technology

30V Drain to Source Voltage (Vdss)

17mOhm Rds On (Max) @ 8A, 10V

8A, 15.2A Continuous Drain Current (Id)

1535pF Input Capacitance (Ciss) (Max) @ 15V

5V Vgs(th) (Max) @ 1mA

44nC Gate Charge (Qg) (Max) @ 10V

-55°C ~ 150°C (TJ) Operating Temperature

98W, 4.16W Power Max

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount (8-SOIC) package

Tape & Reel (TR) packaging

Application Areas

Suitable for a wide range of power and control applications

Product Lifecycle

Current production model, no known discontinuation plans

Replacements and upgrades available from Vishay/Siliconix

Several Key Reasons to Choose This Product

High performance MOSFET array in compact 8-SOIC package

Wide operating temperature range of -55°C to 150°C

Suitable for a variety of power and control applications

RoHS3 compliant for use in environmentally-friendly designs

Readily available from Vishay/Siliconix with replacement options