SI4599DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4599DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

A N and P-channel enhanced-mode field-effect transistor (MOSFET) array in a multichip package.

Product Features and Performance

TrenchFET technology

Logic level gate

Low on-resistance

High power density

Wide operating temperature range (-55°C to 150°C)

High current capability (up to 6.8A)

Product Advantages

Efficient power conversion

Compact design

Reliable performance in harsh environments

Key Technical Parameters

Drain to Source Voltage (Vdss): 40V

Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V

Current Continuous Drain (Id) @ 25°C: 6.8A, 5.8A

Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V

Vgs(th) (Max) @ Id: 3V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V

Quality and Safety Features

RoHS3 compliant

Tape & Reel packaging

Compatibility

8-SOIC (0.154", 3.90mm Width) package

Application Areas

Power conversion and management

Motor control

Switching power supplies

Industrial and automotive electronics

Product Lifecycle

Current product offering

No information on discontinuation or replacement

Several Key Reasons to Choose This Product

Efficient power conversion with low on-resistance

High power density and current capability

Wide operating temperature range for harsh environments

Compact 8-SOIC package for space-constrained designs

Reliable performance with RoHS3 compliance and Tape & Reel packaging