SI4618DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4618DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance dual n-channel power MOSFET transistor in a space-saving SOIC-8 package.

Product Features and Performance

Trench MOSFET technology for high efficiency

Optimized for high-speed switching applications

Low on-resistance for low power loss

Fast switching speed and low gate charge

Wide operating temperature range of -55°C to 150°C

Product Advantages

Compact SOIC-8 package for space-saving designs

High power density and efficiency

Reliable and robust performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

On-resistance (Rds(on)): 17mΩ @ 8A, 10V

Continuous Drain Current (Id): 8A @ 25°C, 15.2A

Input Capacitance (Ciss): 1535pF @ 15V

Gate Threshold Voltage (Vgs(th)): 2.5V @ 1mA

Gate Charge (Qg): 44nC @ 10V

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

Compatible with a wide range of high-speed switching applications

Application Areas

Switching power supplies

Motor drives

DC/DC converters

Class-D audio amplifiers

Other high-frequency, high-efficiency power conversion applications

Product Lifecycle

This product is currently in production and readily available.

Replacements and upgrades may be available in the future.

Key Reasons to Choose This Product

Excellent efficiency and power density due to trench MOSFET technology

Fast switching speed and low gate charge for high-frequency applications

Compact SOIC-8 package for space-constrained designs

Wide operating temperature range for reliable performance in diverse environments

Robust construction and RoHS3 compliance for quality and safety