Manufacturer Part Number
DMHC3025LSD-13
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Arrays
Product Features and Performance
RoHS3 Compliant
8-SOIC (0.154", 3.90mm Width) package
Operating Temperature: -55°C ~ 150°C (TJ)
Power Rating: 1.5W
Configuration: 2 N and 2 P-Channel (Half Bridge)
Drain to Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 25mOhm @ 5A, 10V
Technology: MOSFET (Metal Oxide)
Continuous Drain Current (Id): 6A @ 25°C, 4.2A
Input Capacitance (Ciss): 590pF @ 15V
Logic Level Gate
Gate Threshold Voltage (Vgs(th)): 2V @ 250A
Gate Charge (Qg): 11.7nC @ 10V
Product Advantages
High performance MOSFET array in compact package
Low on-resistance for efficient power switching
Logic level gate for easy control
Suitable for a variety of power management and control applications
Key Technical Parameters
Package: 8-SOIC
Operating Temperature: -55°C to 150°C
Power Rating: 1.5W
Drain to Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 25mOhm
Continuous Drain Current (Id): 6A @ 25°C
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface mount package
Application Areas
Power management and control circuits
Motor drivers
Switching power supplies
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation or replacement plans announced
Several Key Reasons to Choose This Product
High performance MOSFET array in compact package
Low on-resistance for efficient power switching
Logic level gate for easy control
Wide operating temperature range
RoHS3 compliant