FDS8958B - onsemi

Manufacturer Part Number

FDS8958B

Manufacturer

onsemi

Introduction

High-performance power MOSFET transistor in an 8-SOIC package

Product Features and Performance

N and P-channel configuration

30V drain-source voltage

26mOhm on-resistance at 6.4A, 10V

4A continuous drain current at 25°C

540pF input capacitance at 15V

Logic-level gate with 3V threshold voltage

12nC gate charge at 10V

Product Advantages

Low on-resistance for efficient power conversion

High current handling capability

Logic-level gate for easy microcontroller interfacing

Compact 8-SOIC surface-mount package

Key Technical Parameters

Drain-Source Voltage (Vdss): 30V

On-Resistance (Rds(on)): 26mOhm @ 6.4A, 10V

Continuous Drain Current (Id): 6.4A @ 25°C

Input Capacitance (Ciss): 540pF @ 15V

Gate Threshold Voltage (Vgs(th)): 3V @ 250μA

Gate Charge (Qg): 12nC @ 10V

Quality and Safety Features

RoHS3 compliant

Suitable for high-temperature operation up to 150°C junction temperature

Compatibility

Suitable for use in a wide range of power management and control applications

Application Areas

Power supplies

Motor drives

Switching regulators

Battery chargers

Industrial and automotive electronics

Product Lifecycle

This product is currently in production and is not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Excellent low on-resistance performance for efficient power conversion

High current handling capability for demanding applications

Logic-level gate for easy microcontroller integration

Compact and thermally efficient 8-SOIC surface-mount package

Suitable for high-temperature environments up to 150°C