FDS8962C - onsemi

Manufacturer Part Number

FDS8962C

Manufacturer

onsemi

Introduction

High-performance N-Channel and P-Channel MOSFET array in a single package

Designed for power management and switching applications

Product Features and Performance

PowerTrench MOSFET technology

Low on-resistance

Low gate charge

Fast switching

Wide operating temperature range

Product Advantages

Reduced component count

Improved power efficiency

Compact and space-saving design

Reliable performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 10V

Continuous Drain Current (Id) @ 25°C: 7A (N-Channel), 5A (P-Channel)

Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V

Gate Threshold Voltage (Vgs(th)) (Max) @ Id: 3V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V

Quality and Safety Features

Designed and manufactured to high-quality standards

Robust and reliable performance

Meets safety and regulatory requirements

Compatibility

Suitable for a wide range of power management and switching applications

Application Areas

Power management

Switching circuits

Motor control

Lighting control

Automotive electronics

Product Lifecycle

Currently in active production

Replacement or upgrade options available

Key Reasons to Choose This Product

Excellent performance and efficiency

Compact and space-saving design

Reliable and robust construction

Broad compatibility and application versatility

Proven track record and manufacturer reputation