Manufacturer Part Number
CY7C1019DV33-10ZSXIT
Manufacturer
Cypress Semiconductor
Introduction
High-speed asynchronous SRAM with 1Mbit capacity
Designed for applications requiring fast data access and storage
Product Features and Performance
10ns access time
3V to 3.6V operating voltage
-40°C to 85°C operating temperature range
128K x 8 memory organization
Parallel memory interface
Product Advantages
Reliable and durable performance
Low power consumption
High-speed data access
Wide operating temperature range
Key Technical Parameters
Memory Type: Volatile SRAM
Memory Size: 1Mbit
Access Time: 10ns
Write Cycle Time: 10ns
Supply Voltage: 3V to 3.6V
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Surface mount 32-SOIC package
Interchangeable with similar SRAM devices
Application Areas
Industrial automation
Telecommunications equipment
Computer and gaming systems
Embedded systems
Product Lifecycle
Currently in production
Replacement or upgrade options available from Cypress Semiconductor
Key Reasons to Choose This Product
High-speed data access for time-critical applications
Wide operating temperature range for harsh environments
Low power consumption for energy-efficient designs
Reliable and durable performance with RoHS3 compliance
Compatibility with similar SRAM devices for easy integration
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